ace 2301 p - channel enhanc ement mode mosfet ver 1. 3 1 d escription the ace2301 is the p - channel logic enhancement mode power field effect transistor are produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on - state resistance. these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and battery powered circuits, and low in - line power loss are needed in a very small outline surface mount package. features ? v ds = - 20v ? r ds(on) ,v gs @ - 4.5v,i ds @ - 2.8a=100m ? r ds(on) ,v gs @ - 2.5v,i ds @ - 2.0a=150m ? advanced trench process technology ? high density cell design for ultra low on - resistance absolute maximum ratings p arameter s ymbol m ax u nit drain - source voltage v ds - 20 v gate - source voltage v gs 1 2 v continuous drain current i d - 2.2 a pulsed drain current 1) i dm - 8 a maximum power dissipation t a =25 p d 1.25 w t a =70 0.8 operating junction temperature t j - 55 to 150 o c storage temperature range t stg - 55 to 150 o c junction to ambient thermal resistance (pcb mounted) 2) r ja 140 o c /w note: 1.repetitive rating: pulse width limited by the maximum junction temperature. 2.1 - in 2 2oz cu pcb board. 3.guaranteed by design; not subject to production testing.
ace 2301 p - channel enhanc ement mode mosfet ver 1. 3 2 packaging type sot - 23 - 3 3 1 2 ordering i nformation ace 2301 xx + h electrical characteristics parameter symbol conditions m in. typ. max. unit static drain - source breakdown voltage bv dss v gs =0v, i d =250ua - 20 v drain - source on - state resistance r ds(on) v gs = - 4.5v, i d = - 2.8a 70.0 100.0 m drain - source on - state resistance r ds(on ) v gs = - 2.5v, i d = - 2.0a 85.0 150.0 gate threshold voltage v gs(th) v ds =vgs, i d =250ua - 0.4 - 0.9 v zero gate voltage drain current i dss v ds = - 9.6v, v gs =0v - 1 ua gate body leakage i gss v gs = 8v, v ds =0v 100 na f orward trans conductance g fs v ds = - 5v, i d = - 2.8a 6.5 s dynamic 3) total gate charge q g v ds = - 6v, i d = - 2.8a v gs = - 4.5v 5.8 10 nc gate - source charge q gs 0.85 s o t - 2 3 - 3 description 1 gate 2 source 3 drain bm : sot - 23 - 3 pb - free hal ogen - free
ace 2301 p - channel enhanc ement mode mosfet ver 1. 3 3 gate - drain charge q gd 1.7 turn - on delay time t d(on) v dd = - 6v,rl=6 i d = - 1a, v gen = - 4.5v r g =6 13 25 ns turn - on rise time t f 36 60 turn - off delay time t d(off) 42 70 turn - off fall time t f 34 60 input capacitance c iss vds= - 6v, vgs=0v f =1.0mhz 415 pf output capacitance c oss 223 reverse transfer capacitance c rss 87 source - dra in diode max. diode forward current i s - 1.6 a diode forward voltage v sd i s = - 1.6a,v gs =0v - 1.2 v note: pulse test pulse width<=300us, duty cycle<=2%.
ace 2301 p - channel enhanc ement mode mosfet ver 1. 3 4 packing information sot - 23 - 3
ace 2301 p - channel enhanc ement mode mosfet ver 1. 3 5 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life supp ort devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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